UV LED最新动态，来自这两家企业
行家说UV 导读：
行家说UV发现，中科潞安和兆驰半导体都更新了最新关于紫外LED的专利。
江西兆驰半导体有限公司提供一种深紫外LED外延片及其制备方法、LED芯片，通过引入一新的量子阱层，以提升紫外发光二极管的发光效率，具体的，量子阱层包括AlGaN过渡层、嵌入AlGaN过渡层中的Mg掺杂AlN层、在Mg掺杂AlN层上沉积的MgN包覆层及在MgN包覆层上沉积的AlGaN量子阱子层。
其中，将Mg掺杂AlN层嵌入AlGaN过渡层的过程为，首先在AlGaN过渡层的表面形成凹坑，并在凹坑上形成Al纳米点层，后将凹坑上的Al纳米点层氮化形成AlN层，并使AlN层逐渐变大并填充满凹坑，最后对填充满凹坑的AlN层进行Mg掺杂，以达到提高发光二极管的发光效率的目的。
加入UV LED群，可添加岑夕（cenxitalk）
中科潞安这一发明属于LED器件技术领域，具体涉及一种深紫外LED器件及其制备方法，制备方法包括下列步骤：制备深紫外LED芯片；制备第二透明材料基板结构，在第二透明基板上制备金属焊接层、开槽结构；将深紫外LED芯片嵌入第二透明材料基板结构内，完成深紫外LED器件的制备；对深紫外LED器件进行封装。
该发明将深紫外LED芯片嵌入第二透明材料基板结构内，深紫外LED芯片的5个发光面与内腔侧壁紧密贴附，该透明结构材料折射率在空气与第一透明基板之间。为保证芯片发光面与内腔侧壁紧密贴附，降低工艺难度，在内腔做一层透明连接层。这一发明的透明连接层可有效将芯片发光面与内腔侧壁连接，减少光在介质间传播截面全反射。
来源：综合整理
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关于紫外LED，香港这一团队有发现
AMS Spectra、Phoseon固化有新进展
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