制出短周期超晶格结构p-AlGaN层，来自北大这一团队
UVLED风向 · 2024-04-02
行家说UV 导读：
此前，北京大学教授沈波在第三届紫外LED国际会议暨长治LED产业发展推进大会做了有关“AlGaN基深紫外发光材料与器件”的报告。
其指出氮化物半导体具有禁带变化范围宽、二维电子气密度高等一系列优异性质，是继Si和GaAs之后最重要的半导体材料，全球高技术竞争的关键领域之一，根据了解AlN和高Al组分AlGaN是制备DUV-LED不可替代的第三代半导体，无汞污染、电压低、体积小、效率高、寿命长、利于集成。
AlGaN基UV LED面临着材料外延等一些关键科学技术问题，其详细分享了高质量AlN及其量子阱的外延生长、AlGaN的高效p型掺杂和器件研制的研究进展与成果。
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其在报告中指出，由于异质外延和体系内部大失配、强极化的特性，AlN、高Al组分AlGaN及其量子结构的外延生长和DUV-LED研制依然面临一系列关键科学和技术问题；研究发明数种蓝宝石衬底上AlN外延方法，NPSS衬底上AlN外延层XRD摇摆曲线半高宽达132(002)/140(102)arcsec；NPAT衬底上AlN外延层位错腐蚀坑密度达~104cm-2，相比于NPSS低2个数量级；在AlN/蓝宝石模板上外延生长出高质量AlGaN基多量子阱，发光波长277~278 nm，IQE达83.1%；发明“脱附控制超薄层外延”方法，制备出短周期超晶格结构p-AlGaN层，空穴浓度达8.1×1018cm-3；在上述工作基础上，实现了发光波长:277~278 nm，光输出功率36.9 mW@100 mA的深紫外LED器件。
来源：综合整理，半导体照明联盟
###{a%5E%E6%B7%B1%E7%B4%AB%E7%A7%91%E6%8A%80%2Cb%5E%2Cc%5E%E5%85%89%E5%9C%A3%2Ct%5E%2Cr%5E%2Crt%5E%E5%85%AC%E4%BC%97%E5%8F%B7%E5%86%85%E5%AE%B9%E5%8F%91%E5%B8%83%2Cl%5E1%2Cu%5E%2Cids%5E16853264608800000_16958067147670000}@@@
###{a%5E%E6%B7%B1%E7%B4%AB%E7%A7%91%E6%8A%80%2Cb%5E%2Cc%5E%E5%85%89%E5%9C%A3%2Ct%5E%2Cr%5E%2Crt%5E%E5%85%AC%E4%BC%97%E5%8F%B7%E5%86%85%E5%AE%B9%E5%8F%91%E5%B8%83%2Cl%5E1%2Cu%5E%2Cids%5E16853264608800000_16958067147670000}@@@
###{a%5E%E6%B7%B1%E7%B4%AB%E7%A7%91%E6%8A%80%2Cb%5E%2Cc%5E%E5%85%89%E5%9C%A3%2Ct%5E%2Cr%5E%2Crt%5E%E5%85%AC%E4%BC%97%E5%8F%B7%E5%86%85%E5%AE%B9%E5%8F%91%E5%B8%83%2Cl%5E1%2Cu%5E%2Cids%5E16853264608800000_16958067147670000}@@@
###{a%5E%E6%B7%B1%E7%B4%AB%E7%A7%91%E6%8A%80%2Cb%5E%2Cc%5E%E5%85%89%E5%9C%A3%2Ct%5E%2Cr%5E%2Crt%5E%E5%85%AC%E4%BC%97%E5%8F%B7%E5%86%85%E5%AE%B9%E5%8F%91%E5%B8%83%2Cl%5E1%2Cu%5E%2Cids%5E16853264608800000_16958067147670000}@@@
###{a%5E%E6%B7%B1%E7%B4%AB%E7%A7%91%E6%8A%80%2Cb%5E%2Cc%5E%E5%85%89%E5%9C%A3%2Ct%5E%2Cr%5E%2Crt%5E%E5%85%AC%E4%BC%97%E5%8F%B7%E5%86%85%E5%AE%B9%E5%8F%91%E5%B8%83%2Cl%5E1%2Cu%5E%2Cids%5E16853264608800000_16958067147670000}@@@
###{a%5E%E6%B7%B1%E7%B4%AB%E7%A7%91%E6%8A%80%2Cb%5E%2Cc%5E%E5%85%89%E5%9C%A3%2Ct%5E%2Cr%5E%2Crt%5E%E5%85%AC%E4%BC%97%E5%8F%B7%E5%86%85%E5%AE%B9%E5%8F%91%E5%B8%83%2Cl%5E1%2Cu%5E%2Cids%5E16853264608800000_16958067147670000}@@@
###{a%5E%E6%B7%B1%E7%B4%AB%E7%A7%91%E6%8A%80%2Cb%5E%2Cc%5E%E5%85%89%E5%9C%A3%2Ct%5E%2Cr%5E%2Crt%5E%E5%85%AC%E4%BC%97%E5%8F%B7%E5%86%85%E5%AE%B9%E5%8F%91%E5%B8%83%2Cl%5E1%2Cu%5E%2Cids%5E16853264608800000_16958067147670000}@@@
###{a%5E%E6%B7%B1%E7%B4%AB%E7%A7%91%E6%8A%80%2Cb%5E%2Cc%5E%E5%85%89%E5%9C%A3%2Ct%5E%2Cr%5E%2Crt%5E%E5%85%B6%E5%AE%83%E6%9C%8D%E5%8A%A1%2Cl%5E1%2Cu%5E%E8%B5%9E%E5%8E%9F%2Cids%5E16853264608800000_16958067147670000}@@@
###{a%5E%E6%B7%B1%E7%B4%AB%E7%A7%91%E6%8A%80%2Cb%5E%2Cc%5E%E5%85%89%E5%9C%A3%2Ct%5E%2Cr%5E%2Crt%5E%E5%85%B6%E5%AE%83%E6%9C%8D%E5%8A%A1%2Cl%5E1%2Cu%5E%E8%B5%9E%E5%8E%9F%2Cids%5E16853264608800000_16958067147670000}@@@
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###{a%5E%E5%9B%BD%E6%98%9F%2Cb%5E%E4%BC%98%E7%B4%AB%E7%A7%91%E6%8A%80%2Cc%5E%E5%85%89%E5%9C%A3%2Ct%5E%2Cr%5E%2Crt%5E%E5%85%B6%E5%AE%83%E6%9C%8D%E5%8A%A1%2Cl%5E1%2Cu%5E%E8%B5%9E%E5%8E%9F%2Cids%5E16494189835950000_16545839130160000_16626856574480000}@@@
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